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| Final data SPD09P06PL SPU09P06PL Product Summary VDS RDS(on) ID P-TO251-3-1 Feature SIPMOS =Power-Transistor P-Channel Enhancement mode Logic Level 175C operating temperature Avalanche rated dv/dt rated -60 0.25 -9.7 P-TO252 V Drain pin 2 Type SPD09P06PL SPU09P06PL Package P-TO252 P-TO251-3-1 Ordering Code Q67042-S4007 Q67042-S4020 Gate pin1 Source pin 3 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value -9.7 -6.8 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg -38.8 70 4.2 6 20 42 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID =-9.7 A , VDD =-25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =-9.7A, VDS =-48, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-07-02 A Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPD09P06PL SPU09P06PL Values min. typ. max. 3.6 100 75 50 K/W Unit Symbol RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -60 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-250A Zero gate voltage drain current VDS =-60V, VGS=0V, Tj =25C VDS =-60V, VGS=0V, Tj =150C A -0.1 -10 -10 0.3 0.2 -1 -100 -100 0.4 0.25 nA Gate-source leakage current VGS =-20V, VDS =0V VGS =-4.5V, ID =-5.4A Drain-source on-state resistance VGS =-10V, ID =-6.8A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-07-02 Drain-source on-state resistance Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =-5.4 SPD09P06PL SPU09P06PL Values min. typ. 3.5 360 103 40 11 168 49 89 max. 450 130 50 17 252 74 134 ns S pF Unit Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =-25V, f=1MHz VDD =-30V, VGS =-4.5V, ID =-5.4, RG =6 VDD =-30V, VGS =-4.5V, ID =-5.4A, RG =6 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =-9.7A VR =-30V, IF=lS, diF /dt=100A/s Qgs Qgd Qg VDD =-48V, ID =-9.7A VDD =-48V, ID =-9.7A, VGS =0 to -10V V(plateau) VDD =-48V, ID =-9.7A IS ISM TC=25C Page 3 Transconductance gfs VDS 2*ID *RDS(on)max , 1.8 - - 1.3 5.1 14 -4.1 2 7.5 21 - nC V - -1.1 52 64 -9.7 -38.8 -1.4 76 96 A V ns nC 2001-07-02 Final data 1 Power dissipation Ptot = f (TC ) 50 SPD09P06PL SPD09P06PL SPU09P06PL 2 Drain current ID = f (TC ) parameter: VGS 10 V -11 SPD09P06PL W 40 35 A -9 -8 Ptot 30 25 ID -7 -6 -5 20 -4 15 10 5 0 0 -3 -2 -1 20 40 60 80 100 120 140 160 C 190 0 0 20 40 60 80 100 120 140 160 C 190 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C -10 2 SPD09P06PL tp = 11.0s 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD09P06PL K/W A 10 0 -10 1 ID 100 s Z thJC = V DS /I D 10 -1 on ) R DS ( 1 ms 10 -2 -10 0 10 ms DC 10 -3 single pulse -10 -1 -1 -10 -10 0 -10 1 V -10 2 10 -4 -7 10 10 -6 VDS Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2001-07-02 Final data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s -24 SPD09P06PL SPD09P06PL SPU09P06PL 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 0.8 SPD09P06PL A -20 -18 -16 Ptot = 42W VGS [V] a b c d e f g h i kj i -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -8.0 c d ID -14 -12 -10 g h e f g h i RDS(on) f j k -8 -6 -4 -2 0 0 -2 -4 -6 -8 c a b e d V -12 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 25 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 4 A 3 g fs ID 15 10 5 0.5 0 0 1 2 3 4 5 6 8 V VGS Page 5 0.6 0.5 0.4 0.3 0.2 0.1 VGS [V] = jk g h i j -5.0 -5.5 -6.0 -7.0 k -8.0 c d e f -3.0 -3.5 -4.0 -4.5 0 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20 ID S 2.5 2 1.5 1 0 0 1 2 3 4 5 6 7 8 V ID 10 2001-07-02 Final data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -6.8 A, VGS = -10 V 0.75 SPD09P06PL SPD09P06PL SPU09P06PL 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 A 2.4 V RDS(on) 0.55 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 -60 -20 20 60 100 140 C V GS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 3 pF C Coss 10 2 Crss IF 10 1 0 0.6 98% typ 200 98 % 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 typ. 2% C Tj 180 Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s -10 2 SPD09P06PL Ciss A -10 1 -10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) -5 -10 -15 -20 V -30 -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VDS VSD Page 6 2001-07-02 Final data 13 Typ. avalanche energy EAS = f (Tj ) 80 SPD09P06PL SPU09P06PL 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -9.7 A pulsed -16 SPD09P06PL mJ 60 E AS 50 VGS 40 30 20 10 0 25 45 65 85 105 125 145 C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -72 SPD09P06PL V V (BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 140 C 200 Tj Page 7 par.: ID = -9.7 A , VDD = -25 V, RGS = 25 V -12 -10 0,2 VDS max 0,8 VDS max -8 -6 -4 -2 0 0 4 8 12 16 20 nC 28 QGate 2001-07-02 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPD09P06PL SPU09P06PL Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-07-02 |
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